Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide

An air-stable n-channel field-effect transistor (OFET) has been fabricated using N,N′-ditrifluoromethylbenzyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-TFB) as an organic semiconductor. The electron mobilities have been determined to be 4.1 × 10−2 cm2 V−1 s−1 in the saturation region and 1.7 × 10−2 cm2 V−1 s−1 in the linear region, respectively.