The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface - Impact of post-annealing

Characterization of [Zn(S,O)/ZnS]/CuInS2 structures by X-ray and UV photoelectron spectroscopy reveals that induced by a heat-treatment the band bending in the CuInS2 absorber increases. This explains the improvement of the open circuit voltage of corresponding solar cell devices.