کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5421603 | 1507888 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11-1)/Si (100) heterostructure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11-1)/Si (100) heterostructure Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11-1)/Si (100) heterostructure](/preview/png/5421603.png)
چکیده انگلیسی
Surface interfaces of thin magnesium oxide films elaborated onto Si(100)-(2Â ÃÂ 1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and highly homogeneous magnesium oxide with well-defined interfaces could be grown at room temperature (RT) by repeating alternate adsorption of Mg atomic monolayer and O2 on Si(100). RT oxidation process of the first Mg monolayer plays a crucial role as driving force allowing a partial decomposition of amorphous ultra-thin Mg2Si at the Mg/Si interface to form more magnesium oxide in the surface. This process induces crystallization of the interfacial Mg2Si thin film and then gives arise to an unexpected MgOx/Mg2Si(11-1)/Si(100) heterostructure. MgOx monolayer displays a band gap of about 6Â eV and exhibits a weak RMS roughness on large areas.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 642, December 2015, Pages L1-L5
Journal: Surface Science - Volume 642, December 2015, Pages L1-L5
نویسندگان
B. Sarpi, N. Rochdi, R. Daineche, M. Bertoglio, C. Girardeaux, A. Baronnet, J. Perrin-Toinin, M. Bocquet, M. Djafari Rouhani, A. Hemeryck, S. Vizzini,