First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence

First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 641, November 2015, Pages 174-179

Toru Akiyama, Ayako Ito, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi,