Anisotropic effective mass approximation model to calculate multiple subband structures at wide-gap semiconductor surfaces: Application to accumulation layers of SrTiO3 and ZnO

Anisotropic effective mass approximation model to calculate multiple subband structures at wide-gap semiconductor surfaces: Application to accumulation layers of SrTiO3 and ZnO

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 641, November 2015, Pages 224-230

R. Yukawa, K. Ozawa, S. Yamamoto, R.-Y. Liu, I. Matsuda,