کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5421954 1507898 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of electric fields on the Co electrodeposition onto n-Si(111):H Surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Impact of electric fields on the Co electrodeposition onto n-Si(111):H Surfaces
چکیده انگلیسی
The influence of electric fields on the Co electrodeposition onto n-Si(111):H surfaces has been studied using a scanning tunneling microscope (STM). The STM allows for the generation of an electric field in the tunneling gap and directly at the n-Si(111):H surface. Localised Co electrodeposition has been rendered possible at the lateral position of the STM tip in tunneling contact at an electric field of approximately 0.6 V/nm at the n-Si(111):H surface. No Co electrodeposition onto n-Si(111):H has been observed at the same experimental conditions, but without an applied electric field. The effect can be attributed to a local polarisation of H-Si bonds at the n-Si(111):H surface by the applied electric field lowering the activation barrier for the Co electrodeposition onto n-Si(111):H. The observed effect of an electric field appears to be the origin for the required overpotential in the macroscopic electrodeposition of Co onto n-Si(111):H.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 631, January 2015, Pages 178-184
نویسندگان
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