کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5422284 | 1507913 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Peculiar diffusion of C60 on In-adsorbed Si(111)â3Â ÃÂ â3-Au surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In-accumulated Si(111)â3 Ã â3-Au surface represents a highly-ordered homogeneous Au/Si(111) reconstruction with a two-dimensional gas of In adatoms on it. Regularities of C60 migration on this surface have been elucidated through analysis of C60 island density as a function of growth temperature and deposition rate in the framework of the rate equation theory and simulation of C60 migration using density-functional-theory calculations. The critical cluster size has been found to be i = 1 for the whole temperature range studied, from 110 to 240 K, while activation energy for C60 diffusion varies from (99 ± 18) meV at 110 ÷ 140 K to (370 ± 24) meV at 160 ÷ 240 K. This finding has been accounted to the peculiarity of C60 migration in a labyrinth built of In adatoms on the Si(111)â3 Ã â3-Au surface, namely, at low temperatures C60 migration is confined within the labyrinth channels, while at high temperatures C60 molecules possess enough thermal energy to surmount the labyrinth walls.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 616, October 2013, Pages 44-50
Journal: Surface Science - Volume 616, October 2013, Pages 44-50
نویسندگان
A.V. Matetskiy, L.V. Bondarenko, D.V. Gruznev, A.V. Zotov, A.A. Saranin, J.P. Chou, C.R. Hsing, C.M. Wei, Y.L. Wang,