Growth of ultrathin amorphous alumina films during the oxidation of NiAl(100)

The effect of temperature on the oxidation of NiAl(100) is comparatively studied at 25 °C and 300 °C using X-ray Photoelectron Spectroscopy to elucidate the effect of oxide-alloy interfacial reaction on the growth of ultrathin alumina thin films. The oxidation at 25 °C results in self-limiting aluminum oxide film growth to a less extent of the limiting thickness regimes with non-stoichiometric oxide films exhibiting a deficiency of Al cations, whereas for the oxidation at 300 °C the oxide films grow to a larger limiting thickness with relatively enriched with Al at the limiting thickness. The temperature dependent limiting thickness and composition of the oxide films are ascribed to the transport velocity of Al from deeper layers to the oxide/alloy interface during the oxide growth. For the oxidation at 25 °C the oxide film growth depletes Al and forms an underlying Ni-rich interfacial layer that blocks the supply of Al atoms to the oxide/substrate interface, whereas for the oxidation at 300 °C the enhanced diffusion rate maintains adequate supply of Al atoms to the oxide/alloy interface to sustain the oxide film growth to the full extent of the limiting thickness.