Modification of Schottky barrier height on Si (111) by Ga-termination

► The SBH of Ag, Ag and In on Ga-terminated r3 × r3 R30° and 6.3 × 6.3 surfaces have been studied in detail. ► Substantial increases in n-type SBH and decreases in p-type SBH, by as much as 0.2 eV, were generally deducted from various techniques. ► The present work demonstrated a wide range of SBHs on Si accessible with the PI approach. ► The present work showed that the chemical stability of the metal-ATS interface was important for the effectiveness of this approach.