Surface electronic structure of InSb(001)-c(8 × 2)

► Analysis of the electronic structure of InSb(001)‐c(8 × 2) using state‐of‐the-art ARPES and STM. ► Semiconducting c(8 × 2), with no surface states at the gap, Fermi level pinned at the top of the VBM. ► Several surface states characterized, identified atomic origin of the most prominent one, close to the VBM. ► Temperature induced shift quantitatively explained from change of the chemical potential and SPV.