Growth dynamics of low-dimensional CoSi2 nanostructures revisited: Influence of interface structure and growth temperature

► Preferential growth of Ridge and Flat cobalt disilicide nanostructures along <110> directions. ► TEM shows islands grow into the silicon substrate. ► Short rectangular ridge islands become long nanowires at high growth temperatures. ► Elongated rectangular flat islands become more square-like at high growth temperatures.► Shape transition observed is attributed to presence of kinetic-barriers.