Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

► The InN/GaN (0001) interface relaxes via α-core 90° partial misfit dislocations. ► Unreconstructed dislocation cores contain high-energy N dangling bonds. ► The application of existing reconstruction models creates unstable N-N dimers. ► A novel “triple-period” (TP) reconstruction of the dislocation core is introduced. ► It eliminates N dangling bonds via N vacancies instead of N-N dimers.