Atomistic analysis of Ge on amorphous SiO2 using an empirical interatomic potential

► A Tersoff-based empirical potential for the SiGeO system is investigated. ► The potential model is validated against using multiple properties and systems. ► One regression parameter, the GeO bond strength, is used to optimize the potential. ► Ge adsorption and diffusion on amorphous SiO2 is shown to be captured well.