High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system

► Hafnium silicide is detected after a 700 °C anneal. ► Hafnium silicide formation at 700 °C is self limiting. ► Hafnium oxide decomposition requires the decomposition of the SiO2 interlayer. ► A temperature of 900 °C is required to decompose a 0.3 nm SiO2 interlayer.