Angle-resolved inverse photoemission of H-etched 6H-SiC (0001)

► Angle-resolved inverse photoemission is performed on hydrogen-etched 6H-SiC(0001). ► Etching leads to silicate adlayer on SiC surface. ► No unoccupied Mott-Hubbard surface state observed after flashing samples. ► Saturation of dangling bonds by hydroxyl groups more likely than by hydrogen atoms.