Initial stages of Bi/Ge(111) interface formation: A detailed STM study

► Scanning tunneling microscopy follows Bi growth on Ge(111). ► Up to 1.5 monolayer Bi coverage, as-deposited at 300 K or annealed at 450 K. ► 2D island formation and 3D growth onset. ► Semiconducting character of laterally isolated Bi islands just one atom thick. ► Metallic character of laterally continuous disordered Bi monolayer.