Attenuation lengths of high energy photoelectrons in compact and mesoporous SiO2 films

► Experimental AL of photoelectrons traveling in compact and microporous SiO2 films. ► AL are 15-22 nm for compact SiO2 and 23-32 nm for porous SiO2 films for electron energies 8.2-13.2 keV. ► An extrapolation of the TPP2M formula reproduces rather well the experimental observations.