Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature

► Fist report on Ga/Si(5 5 12) interfacial system. ► Ga induced nanowire formation on trenched Si(5 5 12) − 2 × 1 reconstructed surface. ► Role of Ga flux rate has been discussed. ► Room temperature Ga adsorption phase diagram has been drawn.