کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423318 | 1507940 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bonding geometry of Mn-wires on the Si(100)(2Â ÃÂ 1) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The bonding geometry of monoatomic Mn-wires, which form on the reconstructed Si(100)(2Â ÃÂ 1) surface at room temperature, was investigated with scanning tunneling microscopy (STM). The Mn-wire structures are always perpendicular to the Si-dimer rows and the images exhibit a strong modulation of their apparent height as a function of bias voltage. The Mn-wire structures appear as depressions in the empty state images for bias voltages around 0.7Â V, and as protrusions for all other bias voltages. It is suggested that the wire-images are defined by mixed Mn-Si states, either through a hybridization between the Mn d-states and the Si-p states, or backbonding from Mn-d electrons into the broken Si-dimer bond. The dominant bonding geometry shows that the Mn-wire maxima are positioned in between the Si-dimer rows, and a small percentage of about 20% is in registry with the Si-dimer rows, and might be described as defective wires. The experimental STM images cannot currently be described in a satisfactory manner with theoretical bonding models from the literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 605, Issues 13â14, July 2011, Pages L29-L32
Journal: Surface Science - Volume 605, Issues 13â14, July 2011, Pages L29-L32
نویسندگان
C.A. Nolph, H. Liu, P. Reinke,