کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423323 | 1507940 | 2011 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A role of dislocation-induced coalescence in the formation of a cluster structure in deposited films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A role of dislocation-induced coalescence in the formation of a cluster structure in deposited films A role of dislocation-induced coalescence in the formation of a cluster structure in deposited films](/preview/png/5423323.png)
چکیده انگلیسی
⺠In this manuscript we explored the evolution of a cluster structure in the deposited copper layers in the temperature range of 50 K to 500 K using the method of molecular dynamics. ⺠It has been shown that at a high degree of surface occupancy, the processes of atomic ordering have a nondiffusing character and are conditioned by a collective motion of atoms in the clusters. ⺠The temperature dependence of a phenomenon of dislocation-induced coalescence (DIC), which consists in the growth of fcc clusters due to the decrease in amount of hcp clusters as a consequence of dislocation migration, has been studied. ⺠It has been shown that the dislocation-induced coalescence plays an essential role in the cluster structure formation in the explored temperature range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 605, Issues 13â14, July 2011, Pages 1157-1164
Journal: Surface Science - Volume 605, Issues 13â14, July 2011, Pages 1157-1164
نویسندگان
I.G. Marchenko, I.I. Marchenko,