In situ STM observation during InAs growth in nano holes at 300 °C

► We confirmed that In atoms favor to congregate inside a hole structure. ► We fabricated hole structures by applying voltage during As4 irradiation at 300 °C. ► With the In and As4 irradiations, the hole structures congregated In atoms. ► Growth rate inside the hole structure was higher than that on the WL region.