کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423362 | 1507955 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system](/preview/png/5423362.png)
چکیده انگلیسی
A multilayer sample (C (23.3 nm)/Ta (26.5 nm)/C (22.7 nm)/Si substrate) was submitted to AES depth profiling by Ar+ ions of energy 1 keV and angles of incidence of 72°, 78°, and 82°. The shapes of the as-measured depth profiles were strongly different emphasizing that the ion-bombardment conditions strongly affects the shapes of measured depth profiles. We simulated the depth profile measured at an angle of incidence of 72° by calculating the backscattering factor, applying attenuation lengths available in the literature, and simulating the ion-bombardment-induced specimen alteration with a TRIDYN simulation and a trial and error method. The good agreement between the calculated and measured depth profiles justified the method applied.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 7â8, 15 April 2010, Pages 633-640
Journal: Surface Science - Volume 604, Issues 7â8, 15 April 2010, Pages 633-640
نویسندگان
Ludomir Zommer, Alexander Jablonski, László Kotis, Gyorgy Safran, Miklós Menyhárd,