Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

► We study the growth of graphene by thermal decomposition of 3C-SiC/Si(100) surfaces. ► We analyse the surface graphitization as a function of the synthesis temperature. ► The carbon enrichment of the surface is characterized by a specific structuration. ► The graphitization induces a clear modulation of the surface potential.