Ultrafast capture of the hot electron by the surface defects on the Si(001) surface

► The electron dynamics on Si(001) is studied by using the time-resolved 2PPE. ► Hot electrons at the bulk conduction band are trapped by the surface defects in <.5 ps. ► Multiphonon capture and the cascade relaxation at the defects are proposed. ► Electron-temperature-dependence of the surface-recombination-velocity is estimated.