کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423698 | 1507949 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of epitaxial MgO growth on Si(001) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
MgO epitaxial growth on a Si(001) surface by ultrahigh-vacuum molecular beam epitaxy was investigated. Epitaxial orientation and crystalline quality were characterized based on the three-dimensional reciprocal map obtained by Weissenberg RHEED. The epitaxial orientation and crystallinity were strongly dependent on the initial condition of the substrate. When MgO was deposited on a clean Si(001) surface at room temperature a MgO(001) film grew on the Si(001) substrate with two in-plane orientations:MgO[110]//Si[100] and MgO[100]//Si[100]. This is the first observation of MgO epitaxy with the former orientation, which has a smaller mismatch than the latter orientation. When the substrate was exposed to O2 or thermally oxidized, the latterorientation predominantly grew on the substrate. Deposition of Mg on the substrate also produced the latter orientation. These results imply that nucleation sites on the initial substrate play an important role in determining the epitaxial orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 19â20, September 2010, Pages 1614-1618
Journal: Surface Science - Volume 604, Issues 19â20, September 2010, Pages 1614-1618
نویسندگان
Tadashi Abukawa, Shunsuke Sato, Youta Matsuoka,