کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423805 | 1395802 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1Â 0Â 0)-2Â ÃÂ 1 surfaces
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1Â 0Â 0)-2Â ÃÂ 1 surfaces Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1Â 0Â 0)-2Â ÃÂ 1 surfaces](/preview/png/5423805.png)
چکیده انگلیسی
The growth of Pb films on the Si(1 0 0)-2 Ã 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 Ã 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 Ã 1 substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issue 1, 1 January 2010, Pages 1-5
Journal: Surface Science - Volume 604, Issue 1, 1 January 2010, Pages 1-5
نویسندگان
C.C. Hsu, W.H. Lin, Y.S. Ou, W.B. Su, C.S. Chang, C.I. Wu, Tien T. Tsong,