کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424027 | 1395811 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface](/preview/png/5424027.png)
چکیده انگلیسی
The step configuration of a vicinal Si surface is studied under electromigration and a gradient of temperature. An abrupt transition (ÎT = 4 °C) from step-meandering to step bunching is found at 1225 °C for a step-down direct-current direction. This transition starts by random fluctuations which then extend on the whole surface. The transition is studied in the framework of a linear stability analysis of the usual Burton-Cabrera-Frank model by comparing the amplification factors of step-meandering and step bunching instabilities. Both compete at a given temperature, but since the amplification factors behave differently with temperature, bunching abruptly supersedes meandering above a critical temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 3, 1 February 2009, Pages 507-512
Journal: Surface Science - Volume 603, Issue 3, 1 February 2009, Pages 507-512
نویسندگان
F. Leroy, D. Karashanova, M. Dufay, J.-M. Debierre, T. Frisch, J.-J. Métois, P. Müller,