کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424107 | 1395814 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flip motion of heterogeneous buckled dimers on Ge(0Â 0Â 1) by electron injection from STM tip
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Surface motion of a topological defect between p(2Ã2) and c(4Ã2) structures, a “kink”, across buckled Sn-Ge and Si-Ge dimers on Ge(0Â 0Â 1) surfaces was investigated using scanning tunneling microscopy. Energy thresholds of Ïâ electrons for flipping these dimers in the kink are obtained by analyzing the kink surface motion. Electronic states of these systems and energy barriers for flipping the dimers are examined by first-principles calculations for considering elementary processes of the electronically-excited flip motion of the dimers. We propose that the flip motion is caused by a resonant scattering of the Ïâ electrons with localized electronic states at the kink.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 5, 1 March 2009, Pages 781-787
Journal: Surface Science - Volume 603, Issue 5, 1 March 2009, Pages 781-787
نویسندگان
Kota Tomatsu, Binghai Yan, Masamichi Yamada, Kan Nakatsuji, Gang Zhou, Wenhui Duan, Fumio Komori,