Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

We have for the first time observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results.