کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424144 | 1507957 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic structure of the (3 Ã 2) Si-GaAs (0 0 1) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Atomic structure of the (3 Ã 2) Si-GaAs (0 0 1) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data Atomic structure of the (3 Ã 2) Si-GaAs (0 0 1) reconstructed surface: A clue to δ doping mechanism derived from in situ grazing incidence X-ray diffraction data](/preview/png/5424144.png)
چکیده انگلیسی
In view of understanding silicon incorporation in the δ doping process of GaAs (0 0 1), Si atoms have been deposited, under UHV, on a α(2 Ã 4) arsenic terminated substrate. In the low coverage regime, a transition to a less As rich (3 Ã 2) reconstructed Si-GaAs (0 0 1) surface was observed whose atomic structure has been investigated by grazing incidence X-ray diffraction performed in situ. Silicon is found to occupy not only a Ga substitutional site, precursor of a donor dopant but also to form nuclei for neutral clusters, on a template made by the (3 Ã 2) GaAs (0 0 1) reconstructed surface observed by Martrou et al. [Phys. Rev. B 72 (2005) 241307®]. The maximum surface concentration of donor-like silicon is estimated at 1.04 Ã 1014 cmâ2 (1/6th monolayer).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 3â4, 15 February 2010, Pages 415-419
Journal: Surface Science - Volume 604, Issues 3â4, 15 February 2010, Pages 415-419
نویسندگان
M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, A. Coati, A. Ouerghi, B. Etienne,