کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424344 | 1395820 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1Â 1Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1Â 1Â 1) Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1Â 1Â 1)](/preview/png/5424344.png)
چکیده انگلیسی
The interaction between the metallic film/island and the semiconductor substrate is important to the electronic properties of metallic nanostructure grown on semiconductor substrate. Here, we report a series of comparison experiments to investigate the effect of doping concentration of Si substrates on the quantum well state (QWS). Using scanning tunneling microscopy, we observed that the apparent QWS energy positions show a strong dependence on the substrate used and on the sample temperature. Further experimental results by varying the height of scanning tunneling microscope tip over the Pb island uncovered that the observed apparent QWS energy position changes mainly come from the partial bias voltage drop on the combined resistance of the Pb wetting layer and the substrate, which is comparable with the vacuum tunneling resistance at low temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issue 2, 15 January 2010, Pages 175-180
Journal: Surface Science - Volume 604, Issue 2, 15 January 2010, Pages 175-180
نویسندگان
Xieqiu Zhang, Jiepeng Liu, Baikui Li, Kedong Wang, Fangfei Ming, Jiannong Wang, Xudong Xiao,