کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424417 | 1395823 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Excitation-induced atomic desorption and structural instability of III-V compound semiconductor surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We discuss the laser-induced structural instability of III-V compound semiconductor surfaces. The electronic instability is characterized by local bond rupture of both metallic and nonmetallic atoms at intrinsic surface sites, with the bond-rupture rate super linearly dependent on the excitation density. Spectroscopic studies show that bulk-valence excitation triggers surface bond rupture, and that valence holes are the responsible species. From our results, we propose a mechanistic model based on the two-hole localization induced by a high density of non-equilibrated valence holes, and demonstrate that the model describes all the important features quantitatively and consistently. Additional evidence that further supports the validity of the two-hole mechanism is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 20, 15 October 2008, Pages 3162-3171
Journal: Surface Science - Volume 602, Issue 20, 15 October 2008, Pages 3162-3171
نویسندگان
Katsumi Tanimura, Jun'ichi Kanasaki,