کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424611 | 1395830 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mapping subsurface structure through atomically thin bismuth films on Si(1Â 1Â 1)â(7Â ÃÂ 7) with scanning tunneling microscope
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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![عکس صفحه اول مقاله: Mapping subsurface structure through atomically thin bismuth films on Si(1Â 1Â 1)â(7Â ÃÂ 7) with scanning tunneling microscope Mapping subsurface structure through atomically thin bismuth films on Si(1Â 1Â 1)â(7Â ÃÂ 7) with scanning tunneling microscope](/preview/png/5424611.png)
چکیده انگلیسی
We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(1Â 1Â 1)â(7Â ÃÂ 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5Â ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 21, 1 November 2008, Pages 3352-3357
Journal: Surface Science - Volume 602, Issue 21, 1 November 2008, Pages 3352-3357
نویسندگان
Youngtek Oh, Jungpil Seo, Hwansoo Suh, Jung Seok Seo, Se-Jong Kahng, Young Kuk,