کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424794 | 1395836 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Initial oxidation of HF-acid treated Si(1Â 0Â 0) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Initial oxidation of HF-acid treated Si(1Â 0Â 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We demonstrate that the initial oxidation is explained not by a layer-by-layer process, but by a non-uniform mechanism. Just after dipping a Si substrate in HF-acid and spin-drying, the Si surface is immediately oxidized partly with a coverage of 0.2. It is considered that the non-uniform oxidation takes place at surface defects on H passivated Si surfaces. With increasing the air exposure up to 1 week, we have found that the non-oxidized part is oxidized uniformly at slower rates compared to the beginning. IR absorption spectroscopy with a multiple-internal-reflection geometry clearly indicates the backbond oxidation of surface Si takes place despite the H passivation produced by the HF-acid treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 11, 1 June 2007, Pages 2302-2306
Journal: Surface Science - Volume 601, Issue 11, 1 June 2007, Pages 2302-2306
نویسندگان
F. Hirose, M. Nagato, Y. Kinoshita, S. Nagase, Y. Narita, M. Suemitsu,