کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424889 | 1395841 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transformations of C-type defects on Si(100)-2Â ÃÂ 1 surface at room temperature - STM/STS study
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
Surface structure, morphology, roughness, topography - ساختار سطح، مورفولوژی، زبری، توپوگرافیsilicon - سیلیسیم Scanning tunneling spectroscopies - طیف سنجی تونل زنی اسکنSurface defects - عیوب سطحیScanning tunneling microscopy - میکروسکوپ تونلی روبشی Surface electronic phenomena (work function, surface potential, surface states, etc.) - پدیده های الکترونیکی سطح (عملکرد کار، پتانسیل سطح، سطح سطح، و غیره)
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a scanning tunneling microscopy study of the C-type defects on the Si(100)-2Â ÃÂ 1 surface and their transformations into other defect forms at room temperature. A model of the C defect as a dissociated water molecule was adopted for interpretation of the observed transformations. We explained the transformations by hopping the H or OH between bonding sites on Si dimers. Newly, the most stable defect form, corresponding to the H and hydroxyl group adsorbed on the same dimer, is reported. Real time observations provided an explanation for the defect C2-C2 described earlier. A reversible transition of this defect into another form, not revealed yet, is presented. Electronic structure of the observed defects is studied by means of scanning tunneling spectroscopy. Measured spectra show semiconducting character of the C defect. Spectra of the other defect forms are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 17, 1 September 2008, Pages 2835-2839
Journal: Surface Science - Volume 602, Issue 17, 1 September 2008, Pages 2835-2839
نویسندگان
Pavel SobotÃk, Ivan OÅ¡t'ádal,