Development of etch hillocks on different Si(h k l) planes in silicon anisotropic etching

The shapes of hillocks produced on the substrates with different from (0 0 1) crystallographic orientations have been also analyzed. The similarities of the hillocks and intentionally prepared mesas were underlined. It was stated that the morphologies of hillocks are strictly connected with crystallographic orientation of etched substrate. Different shapes of hillocks developing on the substrates with different crystallographic orientations, reflect the arrangement and inclination of {1 1 1} planes on considered substrate.