کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425036 1395846 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of Si(0 0 1)4 Ã— 2-Ga structure by scanning tunneling microscopy and ab initio calculation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Study of Si(0 0 1)4 Ã— 2-Ga structure by scanning tunneling microscopy and ab initio calculation
چکیده انگلیسی

We have studied Si(0 0 1)-Ga surface structures formed at Ga coverages of slightly above 0.50 monolayer (ML) at 250 °C by scanning tunneling microscopy (STM). 4 × 2-, 5 × 2-, and 6 × 2-Ga structures were observed in a local area on the surface. The 4 × 2-Ga structure consists of three protrusions, as observed in filled- and empty-state STM images. The characters of these structures are clearly different from those of other Si(0 0 1)-Ga structures. We also performed an ab initio calculation of the energetics for several possible models for the 4 × 2-Ga structure, and clarified that the three-orthogonal-Ga-dimer model is the most stable. Also, the results of comparing the simulated STM images and observation images at various bias voltages indicate that this structural model is the most favorable.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 12, 15 June 2007, Pages 2415-2419
نویسندگان
, , , , , , ,