کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425236 1395851 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(1 1 1)-7 Ã— 7:Cl surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(1 1 1)-7 Ã— 7:Cl surfaces
چکیده انگلیسی

Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 19, 1 October 2006, Pages L245-L249
نویسندگان
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