کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425281 | 1395852 | 2008 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Different growth modes were identified using scanning tunnelling microscopy (STM) in the initial stages of ultra-thin films growth of copper phthalocyanine (CuPc) on Si(0 0 1) surfaces terminated with ammonia (Si(0 0 1):NH3) and hydrogen (Si(0 0 1):H), depending on the surface chemistry. At the onset of the growth, defect sites are saturated with strongly-pinned flat-lying CuPc molecules. Subsequently, molecules arrange in a standing manner, with two macroscopic island directions along the [1 1 0] and [11¯0] directions. The Si surface termination influences the shape and coverage of the molecular layer before the onset of multilayer formation: on NH3 terminated surfaces, large elongated islands are formed, and nucleation of the second layer begins after the first layer is only 50% complete. This is in contrast to the H passivated surfaces, where a high density of smaller islands form and a higher coverage is reached before second layer nucleation, which we have attributed to a difference in molecular mobility on the substrate. STM shows that the islands contain columns of molecules, which on both surfaces are aligned by 64° with respect to the macroscopic island direction. From these observations, we have derived a model in which the molecular orientation observed in these studies is very similar to the bulk α-phase CuPc. This rationalises the reduced crystallite size characteristic of thicker phthalocyanine films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 4, 15 February 2008, Pages 843-851
Journal: Surface Science - Volume 602, Issue 4, 15 February 2008, Pages 843-851
نویسندگان
J. Gardener, J.H.G. Owen, K. Miki, S. Heutz,