کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425311 | 1395853 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies Microscopically controlled oxidation of H/Si(1 0 0) by lateral surface electric field studied by emission electron microscopies](/preview/png/5425311.png)
چکیده انگلیسی
The ultrathin oxidation of a H/Si(1 0 0) surface with microfabricated pn-junctions was studied by photoemission electron microscopy (PEEM), mirror electron microscopy (MEM) and microscopic X-ray photoelectron spectroscopy (μ-XPS). The ultrathin oxidation inverts the contrast of the junctions in PEEM images. It is found by analyzing the intensity profiles of images that the potential distribution across the pn-junctions is also inverted by the oxidation. The charging of the oxide by ultraviolet irradiation from a light source of PEEM is attributed as the cause of the inversion of the contrast shown by μ-XPS and MEM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 20, 15 October 2007, Pages 4675-4679
Journal: Surface Science - Volume 601, Issue 20, 15 October 2007, Pages 4675-4679
نویسندگان
Hirokazu Fukidome, Kei Tanaka, Masamichi Yoshimura, Kazuyuki Ueda, Fang-Zhun Guo, Toyohiko Kinoshita, Keisuke Kobayashi,