کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425384 | 1395854 | 2008 | 8 صفحه PDF | دانلود رایگان |
Using scanning tunneling microscopy and low energy electron diffraction, we have studied formation of the Cu/Si(1Â 1Â 1) interface. It has been found that depending on the growth conditions the various types of nanostructures can be formed. Room-temperature deposition of the Cu submonolayers onto the Si(1Â 1Â 1)7Â ÃÂ 7 surface results in formation of the ordered arrays of identical-size magic clusters. Room-temperature deposition of Cu onto the Si(1Â 1Â 1)5.55Â ÃÂ 5.55-Cu surface phase leads to developing arrays of Cu nanowires due to Cu accumulation at the atomic step edges. When Cu is deposited onto the Si(1Â 1Â 1)5.55Â ÃÂ 5.55-Cu surface held at 100Â K, layer-by-layer growth of the epitaxial Cu(1Â 1Â 1) film takes place, after which it changes to the growth of 3D Cu islands having a shape of truncated pyramides.
Journal: Surface Science - Volume 602, Issue 1, 1 January 2008, Pages 391-398