کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425393 1395855 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preferential heights in the growth of Ag islands on Si(1 1 1)-(7 Ã— 7) surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Preferential heights in the growth of Ag islands on Si(1 1 1)-(7 Ã— 7) surfaces
چکیده انگلیسی

Growth behavior of thin Ag films on Si substrates at room temperature has been investigated by scanning tunneling microscopy and reflection high energy electron diffraction. In the layer-plus-island growth Ag islands show strongly preferred atomic scale heights and flat top. At low coverage (1 ML), islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number (2, 4, 6, …) of Ag atomic layers. Beyond some coverage the height preference vanishes due to the appearance of screw dislocations and spiral growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 3, 1 February 2007, Pages 603-608
نویسندگان
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