کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425579 | 1395861 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment](/preview/png/5425579.png)
چکیده انگلیسی
A surface preparation method with fine SiO2 particles in water is developed to flatten Si(0Â 0Â 1) surfaces on the nanometer scale. The flattening performance of Si(0Â 0Â 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100Â ÃÂ 100Â nm2) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the ã1Â 1Â 0ã direction on terraces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 15, 1 August 2006, Pages 185-188
Journal: Surface Science - Volume 600, Issue 15, 1 August 2006, Pages 185-188
نویسندگان
Kenta Arima, Akihisa Kubota, Hidekazu Mimura, Kouji Inagaki, Katsuyoshi Endo, Yuzo Mori, Kazuto Yamauchi,