کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5425581 1395861 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Morphological breakdown during growth of a high nitrogen content GaInNAs thin film
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Morphological breakdown during growth of a high nitrogen content GaInNAs thin film
چکیده انگلیسی

The breakdown in surface morphology during the growth of an 8 nm thick Ga0.7In0.3N0.05As0.95 layer has been investigated by scanning tunnelling microscopy. During initial growth (<0.5 nm) the alloy layer is planar but strained. Lateral composition modulation due to spinodal decomposition leads to the co-existence of tensile strained N-rich regions and compressively strained N-poor regions, creating an oscillatory strain field (OSF) across the surface. The overall strain increases with layer thickness up to ∼0.5 nm, after which it is relieved by a transition from two-(2D) to three-dimensional (3D) growth, which manifests itself as an undulating, pitted layer. We propose that the region at the bottom of each pit is N-rich and that overgrowth of such regions is inhibited, thereby avoiding the strain caused by lattice mismatch. The results offer insight into the mechanisms involved in the breakdown of the 2D growth of thin dilute nitride layers at relatively high N concentrations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 15, 1 August 2006, Pages 194-197
نویسندگان
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