A comparative study of ethylene oxide and diethylene dioxide adsorption on silicon (0 0 1)

The adsorption of ethylene oxide (oxirane) and diethylene dioxide (1,4-dioxane) on the Si(0 0 1) surface was investigated using the first-principles pseudopotential method within a generalised gradient approximation to the density functional theory. Our results indicate that oxirane adsorption on the silicon surface probably occurs via C-C bond. This interaction induces the breaking of the C-C bond and the formation of a Si-C-O-C-Si ring. The 1,4-dioxane interaction with the silicon (2 × 2) surface, on the other hand, results in the decomposition of the considered molecule in different radicals, depending on the original adsorbed structure. In order to disregard the possible influence of the slab considered, we suggest that high order reconstruction surfaces, i.e. (4 × 2) or (4 × 4), should be investigated.