کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425657 | 1395862 | 2007 | 4 صفحه PDF | دانلود رایگان |
Fabrication of device structures based on laterally self-ordered systems without the use of expensive and time-consuming nanolithography could have undoubted advantages. For such applications, it is proposed to use misfit dislocation networks from partially relaxed SiGe layers on (1Â 0Â 0) Si substrate as a template for the growth of highly ordered SiGe islands. Ion bombardment during molecular beam epitaxy of metastable SiGe layers leads to such a partial relaxation by misfit dislocation networks. The ions are generated by the interaction of the evaporated Si flux with the electrons in an electron beam evaporator, which causes a partial ionization of Si atoms in the molecular beam. We demonstrate by atomic force microscopy that subsequent growth of SiGe on such relaxed SiGe (25-50% Ge) layers leads to the formation of uniform three-dimensional islands highly ordered in ã1Â 1Â 0ã directions.
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2774-2777