کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425658 | 1395862 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces](/preview/png/5425658.png)
چکیده انگلیسی
Surface patterning is expected to influence the nucleation site of deposited nanostructures. In the present study, clean Si and SiO2 surfaces were patterned by a nanolithographic process using a Focused Ion Beam (FIB). Ge was evaporated in ultra high vacuum at 873Â K on these substrates, resulting in the formation of island arrays. Based on scanning tunneling microscopy and atomic force microscopy images, a statistical analysis was performed in order to highlight the effect of patterning on the size distribution of islands compared to a non-patterned surface. We find that the self-organization mechanism on patterned substrates results in a very good arrangement and positioning of Ge nanostructures, depending on growth conditions and holes distance, both on Si and SiO2 surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2778-2782
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2778-2782
نویسندگان
P.D. Szkutnik, A. Sgarlata, N. Motta, E. Placidi, I. Berbezier, A. Balzarotti,