کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425659 | 1395862 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth dynamics of C-induced Ge dots on Si1âxGex strained layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth dynamics of C-induced Ge dots on Si1âxGex strained layers Growth dynamics of C-induced Ge dots on Si1âxGex strained layers](/preview/png/5425659.png)
چکیده انگلیسی
We address the growth mechanism of Ge quantum dots (QDs) on C-alloyed strained Si1âxGex layers by in situ reflection high-energy electron-diffraction (RHEED). We show that C-induced growth on a Si-rich surface leads to a high density (about 1011Â cmâ2) of small dome-shaped islands. On surfaces up to â65% richer in Ge we observe a decrease of the dot density by two orders of magnitude, which is associated to the increase of the adatom diffusion. Based on quantitative RHEED analysis, the islands are believed to grow in a Volmer-Weber mode even though their spotty electron transmission pattern is not detectable in the initial stages of growth due to the reduced size of the three-dimensional nucleation islands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2783-2786
Journal: Surface Science - Volume 601, Issue 13, 1 July 2007, Pages 2783-2786
نویسندگان
A. Bernardi, M.I. Alonso, A.R. Goñi, J.O. Ossó, M. Garriga,