کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425789 | 1395866 | 2007 | 5 صفحه PDF | دانلود رایگان |

First-principles calculations are performed to study the various structures of oxygen (O) adsorbed on InN(0Â 0Â 0Â 1) surfaces. It is found that the formation energy of O on InN(0Â 0Â 0Â 1) decreases with decreasing oxygen coverage. Of all the adsorbate induced surface structures examined, the structure of InN(0Â 0Â 0Â 1)-(2Â ÃÂ 2) as caused by O adsorption at the H3 sites with 0.25 monolayers coverage is most energetically favorable. Meanwhile, nitrogen (N) vacancy can form spontaneously. Oxygen atoms may also substitute N atoms, or accumulate at the voids inside InN film or simply stay on the surface during growth. The oxygen impurity then acts as a potential source for the n-type conductivity of InN as well as the large energy band gap measured.
Journal: Surface Science - Volume 601, Issue 10, 15 May 2007, Pages 2161-2165