کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5425911 | 1395869 | 2006 | 6 صفحه PDF | دانلود رایگان |
In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)-(3Ã3)R30° and (3 Ã 3) surfaces. We find that Ge adatoms lying on the topmost sites of the (3Ã3)R30° and (3 Ã 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si â Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the (3Ã3)R30° surface, and Ge nanocluster on the (3 Ã 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.
Journal: Surface Science - Volume 600, Issue 5, 1 March 2006, Pages 1107-1112